CUSTOMIZED
Substrates material: MgF2
Orientation: c-cut theta=0 deg +/-12 arcmin
Diameter: 25.4 mm +0/-0.1 mm
Thickness: 1.0 mm +/-0.1 mm
Clear aperture: min 20 mm
Surface quality, S1/S2: 60-40 S-D per CA
Transmitted WFD: <λ/8@633 nm per CA
Parallelism: < 20 arcsec
Protective chamfers: 0.2 - 0.4 mm x 45°
Coatings (IBS):
S1: R_abs<0.65% (best effort <0,5%) 900-1100nm + R_abs <1.9% 700-900nm + R_abs <1.6% 1100-1300nm (R_avg <1.2%@ 700-1300nm), AOI=0 deg
S2: R_abs<0.65% (best effort <0,5%) 900-1100nm + R_abs <1.9% 700-900nm + R_abs <1.6% 1100-1300nm (R_avg <1.2%@ 700-1300nm), AOI=0 deg
GDD (S1+S2+MgF2 substrate) <30 fs^2
LIDT: high power applications
