Substrate Material: UVFS
Diameter: 12.7 mm +0/-0.1 mm
Thickness: 3.0 mm +/-0.1 mm
Clear aperture: min 10 mm
Surface quality, S1: 20-10 S-D
Surface flatness, S1/S2: <λ/8 @ 633 nm over CA
Parallelism: <5 arcmin
Protective chamfers: 0.2-0.4 mm x 45 deg
Chips: <0.2 mm x 45 deg
Coatings (IBS):
S1: HRs>99.5% @ 257 nm + Rp<1% @ 515 nm, AOI=45 deg
S2: ARp<0.1% @ 515 nm, AOI=45 deg
LIDT and duty cycle optimized
