CUSTOMIZED
Substrate Material: UVFS
Diameter: 25.4 mm +0/-0.1 mm
Edge Thickness: 3 mm +/-0.1 mm
Clear aperture: min 20 mm
Surface quality, S1/S2: 20-10 S-D per CA
Surface flatness, S1: λ/8@633 nm over 10 mm dia. CA
Parallelism: < 5 arcmin
Protective chamfer: 0.2-0.4 mm x 45°
Chips: <0.2 mm stoned
Coatings (IBS):
S1 (arrow marks): HTp > 99% @ 1064nm + HRs > 99.9% @ 532 nm, AOI 45 deg.
S2: ARp < 0.1% @ 1064 nm, AOI 45 deg
