CUSTOMIZED
Substrate material: Sapphire AL2O3
Diameter: 25.4 mm +0/-0.1 mm
Edge thickness: 3.18 mm +/-0.1 mm
Clear aperture: min 20 mm
Surface quality, S1/S2: 40-20 S-D per CA
TWFD : λ/8 @633 nm over 15 mm CA
Parallelism: < 5 arcmin
Protective chamfer: 0.2-0.4 mm x 45°
Chips: <0.2 mm stoned
Coatings (IBS):
S1(arrow marks): HRa>95% @ 632 nm + Ra <3% @ 532 + Ra <2% 1064 + 2940 nm, AOI 45°
S2: ARa <2% @ 532 nm + ARa<2% @ 1064 nm + ARa<2@ 2940 nm, AOI 45°
