CUSTOMIZED
Substrate Material: UVFS
Diameter: 12.7 mm +0/-0.1 mm
Thickness: 6.35 mm +/-0.1 mm
Clear aperture: min 11 mm
Surface quality, S1: 20-10 S-D per CA
Surface quality S2: commercial polish (80-50 S-D)
Surface flatness, S1: <λ/8 @633 nm per 10mm dia. CA
Surface flatness: S2: N/A
Parallelism: <10 arcsec
Protective chamfer: 0.1-0.4 mm x 45°
Chips: <0.2 mm stoned
Arrow marks to S1
Coatings (IBS):
S1 (arrow marks): HR>99.9% @ 343 nm. AOI = 0 - 10 deg
S2: uncoated
Optimized for: 343 nm, 1 mJ – 30 mJ, 10 ps – 15 ns, 10 – 125 kHz, beam size 5 – 10 mm
