CUSTOMIZED
Substrate material: Sapphire (c-cut, IR grade)
Diameter: 12.7 mm +0/-0.1 mm
Thickness: 3 mm +/-0.1 mm
Clear aperture: min 10 mm
Surface quality, S1: 20-10 S-D over CA as per MIL-PRF13830B
Surface quality, S2: commercial polishing (80-50 S-D)
Surface flatness, S1: <λ/8 @ 633 nm per CA = 8 mm
Surface flatness, S2: NA
Parallelism: <1 arcmin
Protective chamfers, S1/S2: 0.2-0.3 x 45deg
Chips: <0.1 mm stoned
Laser engraved arrow marks to S1
Coatings (IBS):
S1 (arrow marks): HR>99,7%@2940 nm AOI = 0 deg
S2: uncoated
