CUSTOMIZED
Substrate material: UVFS
Diameter: 25.4 mm +0/-0.1 mm
Thickness: 6.35 mm +/-0.1 mm
Clear aperture: min 20 mm
Coated area: min 23 mm
Surface quality, S1/S2: 20-10 S-D per CA
Surface flatness, S1/S2: <λ/4 @633 nm per CA
Parallelism: <5 arcmin
Protective chamfer: 0.2-0.3 x 45°
Chips: <0.2 mm stoned
Coatings (IBS):
S1: ARsp<0.6% @ 940 nm, AOI=45 deg
S2 (arrow marks):
HTsp>98% @ 940 nm, AOI=40-50 deg (cone)
HRs>99% @ 1030 nm, AOI=45 deg
LIDT: >2 J/cm2, s-pol, 100 ps, 1030 nm (as per ISO S-on-1, 200 um beam dia)
